Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 4.10 A
Technical parameters/drain source resistance: 0.8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 260pF @25V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 4.10 A
Technical parameters/rise time: 22 ns
Technical parameters/isolation voltage: 2.50 kV
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.63 mm
External dimensions/height: 16.12 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI620G
|
International Rectifier | 功能相似 |
MOSFET N-CH 200V 4.1A TO220FP
|
|||
IRFI620G
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 200V 4.1A TO220FP
|
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