Technical parameters/number of channels: 1
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.8 W
Technical parameters/product series: IRFHM9331
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -11.0 A
Technical parameters/Input capacitance (Ciss): 1543pF @25V(Vds)
Technical parameters/rated power (Max): 2.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerTDFN-8
External dimensions/packaging: PowerTDFN-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7121DN-T1-GE3
|
Vishay Siliconix | 功能相似 | 1212-8 |
P 通道 MOSFET,30V 至 80V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI7121DN-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK-1212-8 |
P 通道 MOSFET,30V 至 80V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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