Technical parameters/drain source resistance: | 0.015 Ω |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 52 W |
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Technical parameters/drain source voltage (Vds): | -30.0 V |
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Technical parameters/Continuous drain current (Ids): | -16.0 A |
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Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 1960pF @15V(Vds) |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 3.7W (Ta), 52W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | 1212-8 |
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Dimensions/Packaging: | 1212-8 |
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Physical parameters/operating temperature: | -50℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Design |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/06/16 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFHM9331TRPBF
|
Infineon | 功能相似 | 3X3-8 |
INFINEON IRFHM9331TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
|
||
IRFHM9331TRPBF
|
International Rectifier | 功能相似 | PowerTDFN-8 |
INFINEON IRFHM9331TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
|
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