Technical parameters/rated power: 2.1 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.10 W
Technical parameters/product series: IRFHS8342
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 600pF @25V(Vds)
Technical parameters/rated power (Max): 2.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: PowerVQFN-6
External dimensions/packaging: PowerVQFN-6
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFHS8342TRPBF
|
Infineon | 功能相似 | PQFN-8 |
INFINEON IRFHS8342TRPBF 晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V 新
|
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