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Model IRFHS8342TR2PBF
Description N Channel power MOSFETs 8A to 12A, Infineon Infineon series split HEXFET ® Power MOSFETs include N-channel devices, which are surface mounted and lead packaged. The shape factor can solve most board layout and thermal design challenges. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging PQFN-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.34  yuan 0.34yuan
20+:
$ 0.4631
50+:
$ 0.4288
100+:
$ 0.4116
300+:
$ 0.3979
500+:
$ 0.3876
1000+:
$ 0.3807
5000+:
$ 0.3739
10000+:
$ 0.3670
Quantity
20+
50+
100+
300+
500+
Price
$0.4631
$0.4288
$0.4116
$0.3979
$0.3876
Price $ 0.4631 $ 0.4288 $ 0.4116 $ 0.3979 $ 0.3876
Start batch production 20+ 50+ 100+ 300+ 500+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3295) Minimum order quantity(20)
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Technical parameters/rated power: 2.1 W

Technical parameters/drain source resistance: 0.013 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 2.1 W

Technical parameters/threshold voltage: 1.8 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 8.8A

Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 600pF @25V(Vds)

Technical parameters/descent time: 5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.1W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: PQFN-6

External dimensions/length: 2.1 mm

External dimensions/width: 2.1 mm

External dimensions/height: 0.95 mm

External dimensions/packaging: PQFN-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFHS8342TRPBF IRFHS8342TRPBF Infineon 功能相似 PQFN-8
INFINEON IRFHS8342TRPBF 晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V 新
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