Technical parameters/rated power: 3.1 W
Technical parameters/drain source resistance: 7.1 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/product series: IRFH7921
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 15.0 A
Technical parameters/Input capacitance (Ciss): 1210pF @15V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerVDFN-8
External dimensions/packaging: PowerVDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD17551Q5A
|
TI | 功能相似 | PowerTDFN-8 |
TEXAS INSTRUMENTS CSD17551Q5A 晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
|
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