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Model CSD17551Q5A

Description TEXAS INSTRUMENTS CSD17551Q5A 晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V

Brand: TI

Packaging PowerTDFN-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.007 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	3 W
Technical parameters/threshold voltage:	1.7 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	13.5A
Technical parameters/rise time:	15.5 ns
Technical parameters/Input capacitance (Ciss):	1272pF @15V(Vds)
Technical parameters/rated power (Max):	3 W
Technical parameters/descent time:	4.3 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/dissipated power (Max):	3W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	PowerTDFN-8
Dimensions/Width:	4.9 mm
Dimensions/Packaging:	PowerTDFN-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Supply in progress
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/06/15

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
CSD17327Q5A	TI	功能相似	VSON-8	30V N 通道 NexFET™ 功率 MOSFET
CSD17507Q5A	TI	类似代替	PowerTDFN-8	30V N 通道高侧 NexFET 功率 MOSFET，Vgs 为 20V
IRFH7914TRPBF	International Rectifier	功能相似	PowerVQFN-8	INFINEON IRFH7914TRPBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.8 V	PDF