Technical parameters/rated power: 1 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 490 mA
Technical parameters/Input capacitance (Ciss): 410pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/length: 5 mm
External dimensions/width: 6.29 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD320
|
Vishay Intertechnology | 功能相似 | DIP |
0.5A , 400V , 1.800 Ohm的N通道功率MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
||
IRFD320
|
International Rectifier | 功能相似 | DIP |
0.5A , 400V , 1.800 Ohm的N通道功率MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
||
IRFD320
|
Vishay Semiconductor | 功能相似 |
0.5A , 400V , 1.800 Ohm的N通道功率MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
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