Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 490 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/Continuous drain current (Ids): 490 mA
Technical parameters/rise time: 14.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD320
|
Vishay Intertechnology | 功能相似 | DIP |
0.5A , 400V , 1.800 Ohm的N通道功率MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
||
IRFD320
|
International Rectifier | 功能相似 | DIP |
0.5A , 400V , 1.800 Ohm的N通道功率MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
||
IRFD320
|
Vishay Semiconductor | 功能相似 |
0.5A , 400V , 1.800 Ohm的N通道功率MOSFET 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
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