Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 1.7A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD010PBF
|
Vishay Semiconductor | 类似代替 | DIP-4 |
MOSFET N-CH 50V 1.7A 4-DIP
|
||
IRFD010PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET N-CH 50V 1.7A 4-DIP
|
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