Technical parameters/drain source resistance: 160 mΩ
Technical parameters/dissipated power: 1W (Tc)
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD010
|
Vishay Semiconductor | 类似代替 | DIP |
MOSFET N-CH 50V 1.7A 4-DIP
|
||
IRFD010
|
VISHAY | 类似代替 | DIP |
MOSFET N-CH 50V 1.7A 4-DIP
|
||
IRFD010
|
Vishay Siliconix | 类似代替 | HVMDIP-4 |
MOSFET N-CH 50V 1.7A 4-DIP
|
||
IRFD010
|
International Rectifier | 类似代替 | DIP |
MOSFET N-CH 50V 1.7A 4-DIP
|
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