Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 1.30 A
Technical parameters/drain source resistance: 270 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.30 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD120PBF
|
Infineon | 完全替代 | DIP |
MOSFET N-CH 100V 1.3A 4-DIP
|
||
IRFD120PBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 100V 1.3A 4-DIP
|
|||
IRFD120PBF
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1.3A 4-DIP
|
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