Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 1.30 A |
|
Technical parameters/drain source resistance: | 270 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.30 W |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 1.30 A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | DIP |
|
Dimensions/Packaging: | DIP |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD120
|
Temic | 完全替代 | DIP |
MOSFET N-CH 100V 1.3A 4-DIP
|
||
IRFD120
|
ON Semiconductor | 完全替代 |
MOSFET N-CH 100V 1.3A 4-DIP
|
|||
IRFD120
|
Infineon | 完全替代 | DIP |
MOSFET N-CH 100V 1.3A 4-DIP
|
||
IRFD120
|
International Rectifier | 完全替代 | HVMDIP-4 |
MOSFET N-CH 100V 1.3A 4-DIP
|
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