Technical parameters/dissipated power: 3W (Ta), 125W (Tc)
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/dissipated power (Max): 3W (Ta), 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9640SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3Pin
|
||
IRF9640STRLPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
||
|
|
Vishay Intertechnology | 功能相似 | D2PAK |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
||
IRF9640STRLPBF
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
|||
IRF9640STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
||
IRF9640STRRPBF
|
VISHAY | 功能相似 | TO-263-3 |
MOSFET P-CH 200V 11A D2PAK
|
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