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Model IRF9640STRLPBF

Description VISHAY IRF9640STRLPBF 晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V

Brand: Vishay Semiconductor

Packaging TO-263

Delivery time

Packaging method

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.5 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	3 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Continuous drain current (Ids):	-11.0 A
Technical parameters/rise time:	43 ns
Technical parameters/descent time:	38 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	125 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263
Dimensions/Length:	10.67 mm
Dimensions/Width:	9.65 mm
Dimensions/Height:	4.83 mm
Dimensions/Packaging:	TO-263
Physical parameters/operating temperature:	-55℃ ~ 150℃
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

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IRF9640SPBF	Vishay Semiconductor	功能相似	TO-263	Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3Pin	PDF
IRF9640STRLPBF	Vishay Semiconductor	功能相似	TO-263	Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin	PDF
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IRF9640STRLPBF	Infineon	功能相似		Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin	PDF
IRF9640STRLPBF	Vishay Siliconix	功能相似	TO-263-3	Power Field-Effect Transistor, 11A I(D), 200V, 0.5Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin	PDF
IRF9640STRRPBF	VISHAY	功能相似	TO-263-3	MOSFET P-CH 200V 11A D2PAK	PDF