Technical parameters/drain source resistance: 0.14 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 88 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): -18.0 A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 1100pF @25V(Vds)
Technical parameters/descent time: 58 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: D2PAK-263
Physical parameters/operating temperature: -55℃ ~ 175℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB045AN08A0
|
Fairchild | 功能相似 | TO-263-3 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDB045AN08A0, 90 A, Vds=75 V, 3引脚 D2PAK (TO-263)封装
|
||
IRF9Z34STRRPBF
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
MOSFET P-CH 60V 18A D2PAK
|
||
IRF9Z34STRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 60V 18A D2PAK
|
||
IRF9Z34STRRPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET P-CH 60V 18A D2PAK
|
||
IRF9Z34STRRPBF
|
Vishay Intertechnology | 完全替代 | TO-263-3 |
MOSFET P-CH 60V 18A D2PAK
|
||
SIHF9Z34STRL-GE3
|
Vishay Semiconductor | 功能相似 | D2PAK |
SIHF9Z34STRL-GE3 P-channel MOSFET Transistor, 13A, 60V, 3Pin D2PAK
|
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