Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 2.50 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50.0 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/rise time: 12.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF820A
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 500V 2.5A TO-220AB
|
||
IRF820A
|
Infineon | 完全替代 | Through Hole |
MOSFET N-CH 500V 2.5A TO-220AB
|
||
STP4NK50ZD
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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