Technical parameters/rated voltage (DC): | 500 V |
|
Technical parameters/rated current: | 2.50 A |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 50.0 W |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Leakage source breakdown voltage: | 500 V |
|
Technical parameters/Continuous drain current (Ids): | 2.50 A |
|
Technical parameters/rise time: | 12.0 ns |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
LiteOn | 完全替代 |
Trans MOSFET N-CH 500V 2.5A 3Pin(3+Tab) TO-220AB
|
|||
IRF820APBF
|
VISHAY | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 500V 2.5A 3Pin(3+Tab) TO-220AB
|
||
IRF820APBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 500V 2.5A 3Pin(3+Tab) TO-220AB
|
||
IRF820APBF
|
International Rectifier | 完全替代 |
Trans MOSFET N-CH 500V 2.5A 3Pin(3+Tab) TO-220AB
|
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