Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 8.30 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.5W (Ta)
Technical parameters/product series: IRF7807
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.30 A
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape, Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7807
|
IRF | 类似代替 |
SOIC N-CH 30V 8.3A
|
|||
IRF7807PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7807PBF 晶体管, MOSFET, N沟道, 8.3 A, 30 V, 25 mohm, 4.5 V, 1 V
|
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