Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/rated power: 2.5 W
Technical parameters/drain source resistance: 13 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF7471
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 2.70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO4484
|
Alpha & Omega Semiconductor | 功能相似 | SOIC-8 |
N沟道 40V 10A
|
||
FDS4480
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4480 晶体管, MOSFET, N沟道, 10.8 A, 40 V, 0.008 ohm, 10 V, 3.9 V
|
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