Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.7 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 17.2 ns
Technical parameters/Input capacitance (Ciss): 1950pF @20V(Vds)
Technical parameters/rated power (Max): 1.7 W
Technical parameters/descent time: 16.8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.7W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4470
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4470 晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V
|
||
IRF7471PBF
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 40V 10A 8Pin SOIC
|
||
IRF7471PBF
|
International Rectifier | 功能相似 | SOIC |
Trans MOSFET N-CH 40V 10A 8Pin SOIC
|
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