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Model IRF7424PBF
Description P Channel power MOSFET exceeds 8A, Infineon Infineon discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged P-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) # # # MOSFET transistor, Infineon Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging SO-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.13  yuan 4.13yuan
5+:
$ 5.5715
25+:
$ 5.1588
50+:
$ 4.8699
100+:
$ 4.7461
500+:
$ 4.6635
2500+:
$ 4.5603
5000+:
$ 4.5191
10000+:
$ 4.4572
Quantity
5+
25+
50+
100+
500+
Price
$5.5715
$5.1588
$4.8699
$4.7461
$4.6635
Price $ 5.5715 $ 5.1588 $ 4.8699 $ 4.7461 $ 4.6635
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4810) Minimum order quantity(5)
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Technical parameters/rated power: 2.5 W

Technical parameters/number of channels: 1

Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 22 mΩ

Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30 V

Technical parameters/Continuous drain current (Ids): 11A

Technical parameters/rise time: 23 ns

Technical parameters/Input capacitance (Ciss): 4030pF @25V(Vds)

Technical parameters/descent time: 76 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SO-8

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: power management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7424TRPBF IRF7424TRPBF International Rectifier 功能相似 SOIC-8
INFINEON IRF7424TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V

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