Technical parameters/rated voltage (DC): | -30.0 V |
|
Technical parameters/rated current: | -11.0 A |
|
Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.0135 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/product series: | IRF7424 |
|
Technical parameters/threshold voltage: | 2.5 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | -11.0 A |
|
Technical parameters/rise time: | 23.0 ns |
|
Technical parameters/Input capacitance (Ciss): | 4030pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMP2022LSS-13
|
Diodes Zetex | 功能相似 | SOP |
P-沟道 20 V 13 mOhm 2.5 W 表面贴装 增强型 Mosfet - SOIC-8
|
||
FDS4465
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4465. 晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV
|
||
FDS4465
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4465. 晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV
|
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