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Model FDS4465

Description ON Semiconductor Si P沟道 MOSFET FDS4465, 13.5 A, Vds=20 V, 8引脚 SOIC封装

Brand: ON Semiconductor

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0085 Ω
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	600 mV
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/rise time:	24 ns
Technical parameters/Input capacitance (Ciss):	8237pF @10V(Vds)
Technical parameters/rated power (Max):	1.2 W
Technical parameters/descent time:	140 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2500 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.5 mm
Dimensions/Packaging:	SOIC-8
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, power management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FDS4465	ON Semiconductor	功能相似	SOIC-8	FAIRCHILD SEMICONDUCTOR FDS4465. 晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV	PDF
FDS4465	Fairchild	功能相似	SOIC-8	FAIRCHILD SEMICONDUCTOR FDS4465. 晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV	PDF
IRF7424TRPBF	International Rectifier	功能相似	SOIC-8	INTERNATIONAL RECTIFIER IRF7424TRPBF 场效应管, MOSFET
SI4463CDY-T1-GE3	VISHAY	功能相似	SOIC-8	晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV	PDF
SI4463CDY-T1-GE3	Vishay Siliconix	功能相似	SO-8	晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV	PDF