Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.8A/4.3A
Technical parameters/Input capacitance (Ciss): 520pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7379TRPBF
|
Infineon | 类似代替 | SOIC-8 |
双路场效应管, MOSFET, N和P沟道, 5.8 A, 30 V, 0.038 ohm, 10 V, 1 V
|
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