Technical parameters/rated power: 2.5 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.038 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.8A/4.3A
Technical parameters/Input capacitance (Ciss): 520pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7379
|
IRF | 类似代替 |
SOIC N+P 30V 5.8A/4.3A
|
|||
IRF7379PBF
|
International Rectifier | 功能相似 | SOIC-8 |
SOIC N+P 30V 5.8A/4.3A
|
||
IRF7379TR
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC N+P 30V 5.8A/4.3A
|
||
IRF7379TR
|
Infineon | 类似代替 | SOIC-8 |
SOIC N+P 30V 5.8A/4.3A
|
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