Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/FET types: N-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 400 mOhms @ 5.4A,10V
Other/continuous drain current Id: 9A(Tc)
Other/drain source voltage Vds: 200V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: TO-263AB
Other/Vgs (th): 4V @ 250uA
Other/Pd - power dissipation (Max): 3W(Ta),74W(Tc)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF630SPBF
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 9A D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review