Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 300 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 74 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 9.00 A
Technical parameters/Input capacitance (Ciss): 800pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS4127PBF
|
Infineon | 功能相似 | TO-252-3 |
INFINEON IRFS4127PBF 晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
|
||
IRFS4127PBF
|
IFC | 功能相似 |
INFINEON IRFS4127PBF 晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
|
|||
|
IRFS4227PBF
|
IRF | 功能相似 |
INFINEON IRFS4227PBF 晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
|
|||
IRFS4227PBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRFS4227PBF 晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
|
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