Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 900 mA
Technical parameters/forward voltage: 1.30 V
Technical parameters/drain source resistance: 1.20 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/product series: IRF5802
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 900 mA
Technical parameters/rise time: 1.60 ns
Technical parameters/Input capacitance (Ciss): 88pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3442BDV-T1-E3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
N沟道2.5 -V (G -S )的MOSFET N-Channel 2.5-V (G-S) MOSFET
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||
SI3442BDV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP |
N沟道2.5 -V (G -S )的MOSFET N-Channel 2.5-V (G-S) MOSFET
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