Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 14.0 A
Technical parameters/drain source resistance: 160 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 88.0 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/rise time: 34 ns
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 88000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 完全替代 | CASE 221A-09 |
MOSFET N-CH 100V 14A TO-220AB
|
||
IRF530
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 100V 14A TO-220AB
|
||
IRF530
|
Fairchild | 完全替代 |
MOSFET N-CH 100V 14A TO-220AB
|
|||
IRF530
|
Major Brands | 完全替代 |
MOSFET N-CH 100V 14A TO-220AB
|
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