Technical parameters/number of channels: 1
Technical parameters/dissipated power: 88W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 670pF @25V(Vds)
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.7 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 | CASE 221A-09 |
N沟道增强型功率MOS晶体管 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
||
IRF530
|
Vishay Siliconix | 功能相似 | TO-220-3 |
N沟道增强型功率MOS晶体管 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
||
IRF530
|
Fairchild | 功能相似 |
N沟道增强型功率MOS晶体管 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
|||
IRF530
|
Major Brands | 功能相似 |
N沟道增强型功率MOS晶体管 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
|||
IRF530PBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
|
||
IRF530PBF
|
IRF | 完全替代 |
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
|
|||
|
|
LiteOn | 完全替代 | TO-220-3 |
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
|
||
IRF530PBF
|
International Rectifier | 完全替代 | TO-220 |
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
|
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