Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 5.60 A
Technical parameters/drain source resistance: 540 mΩ (max)
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 43 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100V (min)
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 16.0 ns
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/rated power (Max): 43 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF510PBF
|
International Rectifier | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 5.6A TO-220AB
|
||
IRF510PBF
|
VISHAY | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 5.6A TO-220AB
|
||
IRF510PBF
|
Infineon | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 5.6A TO-220AB
|
||
IRF510PBF
|
LiteOn | 类似代替 |
MOSFET N-CH 100V 5.6A TO-220AB
|
|||
IRF510PBF
|
Vishay Intertechnology | 类似代替 | TO-220 |
MOSFET N-CH 100V 5.6A TO-220AB
|
||
IRF540N
|
Infineon | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 33A
|
||
IRFZ14PBF
|
VISHAY | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Infineon | 功能相似 |
功率MOSFET Power MOSFET
|
|||
IRFZ14PBF
|
LiteOn | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
功率MOSFET Power MOSFET
|
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