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Model IRF3805SPBF
Description HEXFET® N Channel power MOSFET exceeds 55A, Infineon # # MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust single and dual N-channel and P-channel device combination provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
9.85  yuan 9.85yuan
10+:
$ 11.8140
100+:
$ 11.2233
500+:
$ 10.8295
1000+:
$ 10.8098
2000+:
$ 10.7311
5000+:
$ 10.6326
7500+:
$ 10.5538
10000+:
$ 10.5145
Quantity
10+
100+
500+
1000+
2000+
Price
$11.8140
$11.2233
$10.8295
$10.8098
$10.7311
Price $ 11.8140 $ 11.2233 $ 10.8295 $ 10.8098 $ 10.7311
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2806) Minimum order quantity(10)
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Technical parameters/rated power: 130 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0033 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 300 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 210A

Technical parameters/rise time: 20 ns

Technical parameters/Input capacitance (Ciss): 7960pF @25V(Vds)

Technical parameters/descent time: 78 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 300W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 13.08 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF3805S IRF3805S International Rectifier 类似代替 TO-263
D2PAK N-CH 55V 220A
PDF
IRF3805STRLPBF IRF3805STRLPBF International Rectifier 类似代替 TO-263-3
INFINEON IRF3805STRLPBF 晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V 新
PDF
IRF3805STRLPBF IRF3805STRLPBF IFC 类似代替
INFINEON IRF3805STRLPBF 晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V 新
PDF

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