Technical parameters/rated power: 57 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0095 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 57 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 59A
Technical parameters/rise time: 41 ns
Technical parameters/Input capacitance (Ciss): 1210pF @15V(Vds)
Technical parameters/descent time: 3.6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 57W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3707ZS
|
International Rectifier | 类似代替 | TO-263 |
D2PAK N-CH 30V 59A
|
||
IRF3707ZS
|
Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 30V 59A
|
||
IRF3707ZSTRLPBF
|
Infineon | 类似代替 | TO-263-3 |
Infineon IRF3707ZS 系列 N沟道 MOSFET IRF3707ZSTRLPBF, 59 A, Vds=30 V, 2 + Tab引脚 D2PAK封装
|
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