Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 57 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 59A
Technical parameters/rise time: 41 ns
Technical parameters/Input capacitance (Ciss): 1210pF @15V(Vds)
Technical parameters/rated power (Max): 57 W
Technical parameters/descent time: 3.6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 57W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3707ZS
|
International Rectifier | 类似代替 | TO-263 |
D2PAK N-CH 30V 59A
|
||
IRF3707ZS
|
Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 30V 59A
|
||
IRF3707ZSPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRF3707ZSPBF 晶体管, MOSFET, N沟道, 59 A, 30 V, 9.5 mohm, 10 V, 1.8 V
|
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