Technical parameters/rated power: 300 W
Technical parameters/number of pins: 7
Technical parameters/drain source resistance: 0.0008 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/Continuous drain current (Ids): 429A
Technical parameters/rise time: 240 ns
Technical parameters/Input capacitance (Ciss): 7700pF @19V(Vds)
Technical parameters/descent time: 93 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/height: 4.55 mm
External dimensions/packaging: TO-263-7
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF1324S
|
International Rectifier | 功能相似 | TO-263-3 |
N 通道功率 MOSFET，Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。 该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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AUIRF1324S-7P
|
International Rectifier | 功能相似 | TO-263-7 |
INFINEON AUIRF1324S-7P 晶体管, MOSFET, N沟道, 429 A, 24 V, 800 µohm, 10 V, 2 V
|
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IRF1324STRL-7PP
|
Infineon | 完全替代 | TO-263-7 |
D2PAK N-CH 24V 429A
|
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