Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/Continuous drain current (Ids): 429A
Technical parameters/rise time: 240 ns
Technical parameters/Input capacitance (Ciss): 7700pF @19V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 93 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/packaging: TO-263-7
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF1324S
|
International Rectifier | 功能相似 | TO-263-3 |
N 通道功率 MOSFET，Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。 该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
AUIRF1324S-7P
|
International Rectifier | 功能相似 | TO-263-7 |
INFINEON AUIRF1324S-7P 晶体管, MOSFET, N沟道, 429 A, 24 V, 800 µohm, 10 V, 2 V
|
||
IRF1324S-7PPBF
|
International Rectifier | 完全替代 | TO-263-7 |
INFINEON IRF1324S-7PPBF 晶体管, MOSFET, N沟道, 429 A, 24 V, 0.0008 ohm, 10 V, 4 V
|
||
IRF1324S-7PPBF
|
Infineon | 完全替代 | TO-263-7 |
INFINEON IRF1324S-7PPBF 晶体管, MOSFET, N沟道, 429 A, 24 V, 0.0008 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review