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Model IRF2804STRL7PP
Description HEXFET® N Channel power MOSFET exceeds 55A, Infineon # # MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust single and dual N-channel and P-channel device combination provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-263-7
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.44  yuan 10.44yuan
5+:
$ 12.2183
50+:
$ 11.6962
200+:
$ 11.4038
500+:
$ 11.3307
1000+:
$ 11.2576
2500+:
$ 11.1740
5000+:
$ 11.1218
7500+:
$ 11.0696
Quantity
5+
50+
200+
500+
1000+
Price
$12.2183
$11.6962
$11.4038
$11.3307
$11.2576
Price $ 12.2183 $ 11.6962 $ 11.4038 $ 11.3307 $ 11.2576
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1228) Minimum order quantity(5)
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Technical parameters/rated power: 330 W

Technical parameters/number of pins: 7

Technical parameters/drain source resistance: 0.0012 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 330 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 6930 pF

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Continuous drain current (Ids): 280A

Technical parameters/rise time: 120 ns

Technical parameters/Input capacitance (Ciss): 6930pF @25V(Vds)

Technical parameters/rated power (Max): 330 W

Technical parameters/descent time: 130 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 330W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 7

Encapsulation parameters/Encapsulation: TO-263-7

External dimensions/length: 10.5 mm

External dimensions/width: 10.05 mm

External dimensions/height: 4.55 mm

External dimensions/packaging: TO-263-7

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF2804S-7P IRF2804S-7P International Rectifier 类似代替 TO-263
D2PAK N-CH 40V 320A
PDF
IRF2804S-7P IRF2804S-7P Infineon 类似代替 TO-263-7
D2PAK N-CH 40V 320A
PDF
IRF2804S-7PPBF IRF2804S-7PPBF Infineon 类似代替 TO-263-7
INFINEON IRF2804S-7PPBF 晶体管, MOSFET, N沟道, 320 A, 40 V, 1.6 mohm, 10 V, 4 V
PDF

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