Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200W (Tc)
Technical parameters/product series: IRF1404ZS
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 190 A
Technical parameters/rise time: 110 ns
Technical parameters/Input capacitance (Ciss): 4340pF @25V(Vds)
Technical parameters/descent time: 58 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1404ZSTRLPBF
|
Infineon | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0027 ohm, 10 V, 4 V
|
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