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Description 晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0027 ohm, 10 V, 4 V
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.17  yuan 3.17yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2527) Minimum order quantity(1)
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Technical parameters/rated power:

220 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0027 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

200 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Continuous drain current (Ids):

190A

 

Technical parameters/rise time:

110 ns

 

Technical parameters/Input capacitance (Ciss):

4340pF @25V(Vds)

 

Technical parameters/descent time:

58 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/dissipated power (Max):

200W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10 mm

 

Dimensions/Width:

9.25 mm

 

Dimensions/Height:

4.4 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Model Brand Similarity Encapsulation Introduction Data manual
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