Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 42.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/product series: IRF1310NS
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 42.0 A
Technical parameters/rise time: 56.0 ns
Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)
Technical parameters/rated power (Max): 3.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1310NSTRRPBF
|
Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 100V 42A
|
||
STB35NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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