Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 100 A
Technical parameters/rated power: 170 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.4 W
Technical parameters/product series: IRF1104S
Technical parameters/drain source voltage (Vds): 40.0 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 100 A
Technical parameters/rise time: 114 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB100N04S3-03
|
Infineon | 功能相似 | TO-263-3 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
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