Technical parameters/power supply voltage (DC): 20.0V (max)
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: 620 V
Technical parameters/output current: 200 mA
Technical parameters/dissipated power: 0.625 W
Technical parameters/product series: IR2308
Technical parameters/rise time: 220 ns
Technical parameters/descent time: 80 ns
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 220 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2101STRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
|
||
IR2101STRPBF
|
IFA | 类似代替 |
INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
|
|||
IR2101STRPBF
|
IFC | 类似代替 |
INFINEON IR2101STRPBF 芯片, IGBT/MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
|
|||
IR2153STRPBF
|
Infineon | 类似代替 | SOIC-8 |
IC,Infineon ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
||
IR2153STRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
IC,Infineon ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
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