Technical parameters/rise/fall time: | 80ns, 45ns |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/Static current: | 500 µA |
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Technical parameters/rise time: | 80 ns |
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Technical parameters/descent time: | 45 ns |
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Technical parameters/descent time (Max): | 100 ns |
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Technical parameters/rise time (Max): | 150 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Technical parameters/power supply voltage: | 10V ~ 15.6V |
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Technical parameters/power supply voltage (Max): | 20 V |
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Technical parameters/power supply voltage (Min): | 10 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.98 mm |
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Dimensions/Width: | 3.99 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2183SPBF
|
IFA | 类似代替 |
INFINEON IR2183SPBF 双路驱动器, MOSFET, 高压侧和低压侧, 10V-20V电源, 2.3A输出, 220ns延迟, SOIC-8
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