Technical parameters/rated power: 104.2 W
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 104.2W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 11.4A
Technical parameters/rise time: 7.5 ns
Technical parameters/Input capacitance (Ciss): 1100pF @100V(Vds)
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 104.2W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.2 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI65R310CFD
|
Infineon | 类似代替 | TO-262-3 |
Infineon CoolMOS™CE/CFD 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
SPI15N60CFDHKSA1
|
Infineon | 功能相似 | TO-262-3-1 |
TO-262 N-CH 600V 13.4A
|
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