Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 156W (Tc) |
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Technical parameters/drain source voltage (Vds): | 650 V |
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Technical parameters/Continuous drain current (Ids): | 13.4A |
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Technical parameters/rise time: | 24 ns |
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Technical parameters/Input capacitance (Ciss): | 1820pF @25V(Vds) |
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Technical parameters/descent time: | 5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 156W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-262-3-1 |
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Dimensions/Packaging: | TO-262-3-1 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI65R310CFD
|
Infineon | 功能相似 | TO-262-3 |
Infineon CoolMOS™CE/CFD 功率 MOSFET ### MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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||
IPI65R310CFDXKSA1
|
Infineon | 功能相似 | TO-262-3 |
Infineon CoolMOS CFD 系列 Si N沟道 MOSFET IPI65R310CFDXKSA1, 11 A, Vds=700 V, 3引脚 I2PAK (TO-262)封装
|
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