Technical parameters/rated power: 110 W
Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 31A
Technical parameters/rise time: 66 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/descent time: 63 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: DPAK-252
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR5305
|
Infineon | 完全替代 | DPAK-252 |
DPAK P-CH 55V 31A
|
||
IRFR5305
|
International Rectifier | 完全替代 | DPAK-252 |
DPAK P-CH 55V 31A
|
||
IRFR5305PBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR5305PBF 晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
|
||
IRFR5305TRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR5305TRPBF 晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
|
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