Technical parameters/rated voltage (DC): -55.0 V
Technical parameters/rated current: -31.0 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/product series: IRFR5305
Technical parameters/input capacitance: 1.20 nF
Technical parameters/gate charge: 63.0 nC
Technical parameters/drain source voltage (Vds): -55.0 V
Technical parameters/leakage source breakdown voltage: -55.0 V
Technical parameters/Continuous drain current (Ids): -31.0 A
Technical parameters/rise time: 66.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/packaging: DPAK-252
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR5305TR
|
Infineon | 完全替代 | DPAK-252 |
P沟道 55V 31A
|
||
IRFR5305PBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR5305PBF 晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
|
||
IRFR5305TRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR5305TRPBF 晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
|
||
SPD30P06P G
|
Infineon | 功能相似 | TO-252-3 |
INFINEON SPD30P06P G 晶体管, MOSFET, P沟道, -30 A, -60 V, 0.069 ohm, -10 V, -3 V
|
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