Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 41pF @25V(Vds)
Technical parameters/rated power (Max): 360 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS138
|
NCE | 功能相似 |
FAIRCHILD SEMICONDUCTOR BSS138 晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
|
|||
|
|
Blue Rocket Electronics | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSS138 晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
|
||
BSS138
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSS138 晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
|
||
BSS138
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSS138 晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
|
||
BSS138
|
SHIKUES | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSS138 晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
|
||
BSS138LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BSS138LT1G 晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
|
||
BSS138N
|
Infineon | 类似代替 | SOT-23-3 |
BSS138N N沟道MOSFET 60V 230mA/0.23A SOT-23/SC-59 marking/标记 SK 逻辑电平输入/热关机/过压保护/过载保护/过压保护
|
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