Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 3.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 360 mW
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 230 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/width: 1.3 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Onboard charger
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS138NH6327
|
Infineon | 完全替代 | SOT-23-3 |
Infineon SIPMOS® N 通道 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
||
BSS138NL6327
|
Infineon | 类似代替 | SOT-23 |
60V,0.23A,N沟道功率MOSFET
|
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